0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SA1580 features high f t . small reverse transfer capacitance. adoption of fbet process. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -70 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -4 v collector current i c -50 ma collector current (pulse) i cp -100 ma collector dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -40v, i e =0 -0.1 a emitter cutoff current i ebo v eb =-3v,i c =0 -1 a dc current gain h fe v ce = -10v , i c = -10ma 60 270 gain bandwidth product f t v ce = -10v , i c = -10ma 350 700 mhz base-collector time constant r bb ,c c v ce = -10v , i c = -10ma 8 ps output capacitance c ob v cb = -10v , f = 1.0mhz 1.7 pf reverse transfer capacitance c re v cb = -10v , f = 1.0mhz 1.3 pf collector-emitter saturation voltage v ce(sat) i c = -20ma , i b = -2ma -0.6 v base-emitter saturation voltage v be(sat) i c = -20ma , i b =-2ma -1 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -70 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -60 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -4 v h fe classification marking rank 3 4 5 hfe 60 120 90 180 135 270 ql product specification 1 sales@twtysemi.com 1 of 1 http://www.twtysemi.com sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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